Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed
| Autor: | Manabu Kojima, T. Gallagher, T. Rueckes, K. Kawabata, Junichi Watanabe, Hitoshi Saito, R. Sen, K. Hara, L. Cleveland, N. Leong, T. Tamura, Naoya Sashida, H. Luan, J. Ohno, A. Nakakubo, T. Shimoyama, H. Wada, A. Fujii, J. Seino |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Cellular array business.industry 020208 electrical & electronic engineering Single pulse 02 engineering and technology law.invention Switching time Reliability (semiconductor) CMOS law 0202 electrical engineering electronic engineering information engineering Optoelectronics Resistor business |
| Zdroj: | 2021 IEEE International Memory Workshop (IMW). |
| Popis: | We developed 16 Mb 1T1R NRAM integrating CNTs resistor elements into the intermediate wirings of 55 nm CMOS. Excellent reliabilities were proven by the retention test at 150 °C extrapolated for 100 kh and the endurance test of 1E6 cycles. The switching speed was realized for cell array at 200 ns. In addition, we successfully fabricated CNTs resistor elements with 49% shrunk small via pitch cell area and realized advantageous high switching speed with 0.5 ns single pulse even omitting verify operation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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