Resonant excitation of bound exciton luminescence in GaAs1−xPx alloys
| Autor: | D. J. Wolford, B. G. Streetman, Shui Lai, Miles V. Klein |
|---|---|
| Rok vydání: | 1979 |
| Předmět: |
Coupling
Dye laser Materials science Condensed matter physics Phonon Exciton General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Materials Science Effective mass (solid-state physics) Condensed Matter::Superconductivity Materials Chemistry Condensed Matter::Strongly Correlated Electrons Atomic physics Luminescence Excitation Biexciton |
| Zdroj: | Solid State Communications. 32:51-54 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(79)90995-5 |
| Popis: | Bound exciton luminescence in GaAs 1−x P x alloys is sufficiently broadened by alloy disorder that little information can be gained about electronic energies and phonon couplings. By resonantly exciting narrow exciton components with a dye laser we have recovered sharp luminescence features like those in GaP. Detailed results are given for x=0.50 where broadening is greatest. Excitons bound to group VI donors show phonon coupling characteristic of an effective mass level at the X 1 conduction band minimum, whereas nitrogen traps show phonon assistance characteristic of a deep level--stronger coupling to phonons throughout much of k -space and more zero phonon broadening. We identify phonons and verify zero-phonon luminescence lineshape for both cases. |
| Databáze: | OpenAIRE |
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