Characteristics of dynamic resistance in a heavily doped silicon semiconductor resistor
| Autor: | Jong Dae Kim, Tae Moon Roh, Dae Yong Kim, Sang Gi Kim, Jin Gun Koo, Hoon Soo Park |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors business.industry Negative resistance Thermistor Doping Electrical engineering chemistry.chemical_element Computer Science::Other law.invention Computer Science::Emerging Technologies Semiconductor chemistry law Electrical and Electronic Engineering Composite material Resistor Joule heating business Temperature coefficient |
| Zdroj: | International Journal of Electronics. 86:269-279 |
| ISSN: | 1362-3060 0020-7217 |
| DOI: | 10.1080/002072199133409 |
| Popis: | The dynamic resistance of a heavily doped semiconductor resistor was evaluated by observing the electrical mobility and conductivity of the resistor as a function of temperature. It is known for the first time that the silicon resistor presents a PTCR (positive temperature coefficient of resistance) below its intrinsic temperature and an NTCR (negative temperature coefficient of resistance) above the intrinsic temperature but below the melting temperature, and again a PTCR beyond the melting temperature, when molten silicon becomes metallic. The special features of the resistor appear to be that the resistance increases due to joule heating, decreases due to negative resistance behaviour, and then the resistor is melted and vaporized to generate plasma. |
| Databáze: | OpenAIRE |
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