Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications
| Autor: | A. O. Brown, F. J. Clough, William I. Milne, S. N. Ekkanath Madathil |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Carbon film chemistry Plasma-enhanced chemical vapor deposition Thin-film transistor Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 270:517-521 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(95)06834-1 |
| Popis: | This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N 2 O SiH 4 gas ratio. By varying the N 2 O SiH 4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10−7Ω−1cm−1 where they exhibit a T −1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. |
| Databáze: | OpenAIRE |
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