Insight Into the Mechanism of Tail Bits in Data Retention of Vacancy-Modulated Conductive Oxide RRAM
| Autor: | Kazuaki Kurihara, Mihaela Ioana Popovici, Gouri Sankar Kar, Attilio Belmonte, Sang-Gyu Koh, Ludovic Goux, G. L. Donadio |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Fabrication Condensed matter physics chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Electronic Optical and Magnetic Materials Resistive random-access memory Amorphous solid chemistry Vacancy defect 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology Tin Current density |
| Zdroj: | IEEE Electron Device Letters. 39:480-483 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The underlying mechanism causing tail bits in data retention for high resistance state (HRS) of vacancy-modulated conductive oxide resistive RAM, consisting of TiN/amorphous-Si/TiO2/TiN structure, was investigated. The tail bits observed in the small size cells with large On/Off ratio were attributed to the current fluctuations in time. The mechanism, in which the current fluctuation is caused by the fragility of the conduction path in a high resistive region determining the cell current in TiO2, was clarified by retention measurement with various conditions of On/Off ratio and cell size. It was found that the total number of defects in the high resistive region is the key to ensure a steady HRS conduction. We, furthermore, demonstrated a way to suppress the tail bits in the small size cells ( $40 \times 40$ nm2) even with large On/Off ratio ( $\times 10$ ) by process tuning of TiO2 film fabrication. |
| Databáze: | OpenAIRE |
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