| Autor: |
Chi Lang Nguyen, Hung Wei Yu, Ching-Wen Kuan, Shih-Hsuan Tang, Yung-Hsuan Su, Edward Yi Chang |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014). |
| Popis: |
The epitaxial growth of high quality Ge thin films on different materials of In 0.51 Ga 0.49 P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In 0.51 Ga 0.49 P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In 0.51 Ga 0.49 P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In 0.51 Ga 0.49 P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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