The Analysis of Power RF GaN Transistors Thermal Parameters in Pulse Mode
| Autor: | Alexander Khlybov, Denis Rodionov, Pavel Timoshenkov, Andrey Panteleev |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon business.industry Thermal resistance Transistor chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor Substrate (electronics) law.invention Reliability (semiconductor) chemistry Hardware_GENERAL law Duty cycle Hardware_INTEGRATEDCIRCUITS Optoelectronics Device under test business |
| Zdroj: | 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). |
| DOI: | 10.1109/elconrus51938.2021.9396223 |
| Popis: | The achievements in GaN HEMT technologies allow manufacturing transistors with output power up to 1000W in pulse mode. Self-heating in the transistor channel is a limiting factor for device reliability. The ordinary value for transistor channel temperature is up to 200C. It’s important to know the transistor thermal mode to predict device capabilities. The device under test in this work is an RF GaN transistor on silicon substrate with 2.1mm overall device width. This paper contains the results of the research of high-power RF GaN transistors thermal phenomena in pulse mode. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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