Retention Failure Mechanism for Low-Resistance-States of Cu-doped SiO2Resistive Memory

Autor:	Shih-Kun Liu, Yueh-Ying Tsai, Yung-Hung Huang, Chih-Yi Liu
Rok vydání:	2014
Předmět:	Protein filament Materials science Diffusion Failure mechanism Activation energy Composite material Cu doped Condensed Matter Physics Dissolution Layer (electronics) Electronic Optical and Magnetic Materials Resistive random-access memory
Zdroj:	Ferroelectrics. 459:99-104
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150193.2013.838091
Popis:	A Cu/SiO2/Pt structure is used to investigate the retention failure mechanism of the low-resistance-state (LRS) of resistive-switching behavior. Resistance switching is determined by the electrodeposition and dissolution of a Cu-conducting filament within the SiO2 layer. The LRS retention time is decreased with an increase in LRS resistance, which is probably caused by the dissolution of the Cu filament near the Cu/SiO2 interface. The activation energy of LRS retention is 1.78 eV, which is close to that of the Cu diffusion in the SiO2 film. The cone-shaped Cu filament model and the diffusion phenomenon are used to examine the failure mechanism of LRS retention.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c7ba1ba27f0a3ef96b13af379457cf08 https://doi.org/10.1080/00150193.2013.838091 Zobrazit plný text záznamu