Energy levels of native defects in n-Pb1-xSnxSe

Autor:	A. E. Svistov, A. P. Shotov, I. V. Kutcherenko
Rok vydání:	2008
Předmět:	Monocrystalline silicon Materials science Position (vector) Analytical chemistry Function (mathematics) Energy (signal processing)
Zdroj:	Physics of Narrow Gap Semiconductors ISBN: 9783540111917
DOI:	10.1007/3-540-11191-3_80
Popis:	In monocrystalline Pb1-xSnxSe samples of n-type with 0 ≤x≤0.37 the variation of the Ha l coefficient was observed in 4.2-300K temperature region. A model of two levels was proposed and their energetic position as a function of temperature was determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c79e210a54de98a253fbf9e3f0109b66 https://doi.org/10.1007/3-540-11191-3_80 Zobrazit plný text záznamu