A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

Autor:	Ke Dao-Ming, Wu Xiulong, Chen Jun-ning
Rok vydání:	2008
Předmět:	LDMOS Materials science Depletion region business.industry Reverse short-channel effect Gate oxide MOSFET Optoelectronics Silicon on insulator Drain-induced barrier lowering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Threshold voltage
Zdroj:	2008 4th International Conference on Wireless Communications, Networking and Mobile Computing.
DOI:	10.1109/wicom.2008.460
Popis:	The potential distribution for the channel depletion layer of fully depleted SOI LDMOS was obtained by using quasi- two-dimensional approach, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage. Otherwise, the variation of threshold voltage is independent on back-gate bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c79d13f1ef09d3e3517fcfcb7500820d https://doi.org/10.1109/wicom.2008.460 Zobrazit plný text záznamu