Design Theory of Junction Transistors
| Autor: | J. M. Early |
|---|---|
| Rok vydání: | 1953 |
| Předmět: |
Materials science
Spreading resistance profiling business.industry Transistor General Engineering Electrical engineering Hybrid-pi model Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Signal law.invention Depletion region law Optoelectronics Equivalent circuit business Ohmic contact Short circuit |
| Zdroj: | Bell System Technical Journal. 32:1271-1312 |
| ISSN: | 0005-8580 |
| DOI: | 10.1002/j.1538-7305.1953.tb01462.x |
| Popis: | The small signal ac transmission characteristics of junction transistors are derived from physical structure and bias conditions. Effects of minority carrier flow and of depletion layer capacitances arc analyzed for a one dimensional model. The ohmic spreading resistance of the base region of a three dimensional model is then approximated. Short circuit admittances representing minority carrier flow, depiction layer capacitances, and ohmic base resistance elements are then combined into an equivalent circuit. Theoretical calculations are compared to observations for two typical designs. |
| Databáze: | OpenAIRE |
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