Power Amplifier Design in Broadband RF IC Transponder for Manufacture 4.0 RF Link

Autor: A Abdurrakhman Hamid, Basuki Rachmatul Alam
Rok vydání: 2019
Předmět:
Zdroj: 2019 International Symposium on Electronics and Smart Devices (ISESD).
DOI: 10.1109/isesd.2019.8909511
Popis: Wireless interconnection between sensors, instruments, and other devices can significantly improve the productivity and efficiency in the manufacturing industry. Product defect anticipation and production machine adaptability can be improved by using machine-to-machine communication. A Transponder can be used to connect one device to another. One of the most important parts of the transponder is the power amplifier. In this project, a 2.4 GHz power amplifier with 100 MHz bandwidth is designed. CREE CG2H40010 was the chosen power amplifier transistor. This power amplifier is an AB class amplifier which can produce Pout more than 37dBm with Power Added Efficiency more than 50%. The designing process was done by using Keysight ADS. By using harmonic balance simulation to check the designed power amplifier capability, it is concluded that the designed power amplifier has Pout 39.445 dBm and PAE 50.110% with Power available 23 dBm at 2.4 GHz.
Databáze: OpenAIRE