Photoluminescence analysis of p-doped GaAs using the Roosbroeck–Shockley relation
| Autor: | Bruno Ullrich, S. R. Munshi, G J Brown |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Photoluminescence
Condensed matter physics Band gap business.industry Chemistry Semiconductor materials Doping Analytical chemistry Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Position (vector) Materials Chemistry Electrical and Electronic Engineering business Absorption (electromagnetic radiation) |
| Zdroj: | Semiconductor Science and Technology. 22:1174-1177 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/22/10/016 |
| Popis: | Linking absorption with emission, the Roosbroeck?Shockley relation (RSR) expresses a fundamental principle of semiconductor optics. Despite its elementary character, the RSR is hardly advocated since it is commonly understood that the relation holds for intrinsic materials only. However, we demonstrate that the RSR reproduces very well the photoluminescence of p-doped GaAs over the temperature range of 5?300 K. The fitting parameters used, such as energy position and doping-induced band gap shrinkage, satisfactorily coincide with the literature. The presented results show that the RSR can have a much broader impact in semiconductor analysis than generally presumed.The paper is dedicated to our friend and mentor Rand R Biggers (1946?2006) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|