Formation and investigation of p–n diode structures based on lanthanum manganites and Nb-doped SrTiO3
| Autor: | R. Butkutė, V. Lisauskas, A. K. Oginskis, F. Anisimovas, M.A. Rosa, K. Šliužienė, Bonifacas Vengalis, Margarida Godinho, J. Devenson |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Doping Metals and Alloys Analytical chemistry Mineralogy chemistry.chemical_element Heterojunction Crystal growth Surfaces and Interfaces Manganite Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Strontium titanate Lanthanum Thin film p–n diode |
| Zdroj: | Thin Solid Films. 515:599-602 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2005.12.253 |
| Popis: | High quality La 2 / 3 Ba 1 / 3 MnO 3 (LBMO), La 2 / 3 Ca 1 / 3 MnO 3 (LCaMO) and La 2 / 3 Ce 1 / 3 MnO 3 (LCeMO) thin films were grown on Nb 0.1 wt.% doped conducting SrTiO 3 (100) (STON) substrates. Asymmetric current–voltage relations measured for the LBMO/STON, LCaMO/STON and LCeMO/STON heterostructures at T = 78/300 K certified hole-doping of the manganite films. The diffusion voltage, corresponding to a steep current increase at forward bias has been estimated. The LCaMO/STON heterojunction showed possible impact of interfacial strain on the rectifying behavior, meanwhile, the LaCeMO/STON heterostructures demonstrated evidence of phase separation of the manganite film at the interface. |
| Databáze: | OpenAIRE |
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