Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
| Autor: | Philip Hens, Peter J. Wellmann, Erdmann Spiecker, Günter Wagner, Rositza Yakimova, Julian M. Müller, Mikael Syväjärvi, Rickard Liljedahl |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering chemistry.chemical_element Gallium nitride Nanotechnology Chemical vapor deposition Condensed Matter Physics chemistry.chemical_compound Template Semiconductor chemistry Mechanics of Materials General Materials Science Sublimation (phase transition) Wafer business Sublimation epitaxy |
| Zdroj: | Materials Science Forum. :177-180 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.717-720.177 |
| Popis: | In this work a new approach for the production of freestanding cubic silicon carbide (3C SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN). |
| Databáze: | OpenAIRE |
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