Electrical detection of terahertz radiation by silicon carbide nanostructure

Autor:	V. S. Khromov, Nikolai T. Bagraev, S. A. Kukushkin, A. M. Malyarenko, Andrey Osipov, L.E. Klyachkin
Rok vydání:	2021
Předmět:	Materials science Nanostructure Silicon Terahertz radiation business.industry Detector chemistry.chemical_element chemistry.chemical_compound chemistry Silicon carbide Optoelectronics Current (fluid) business Voltage
Zdroj:	2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
DOI:	10.1109/irmmw-thz50926.2021.9567540
Popis:	The ability to detect the terahertz (THz) emission from a silicon nanosandwich structure (Si-NS) is demonstrated with the silicon carbide nanostructure (SiC-NS) as a detector. Electrical response in longitudinal voltage of the detector was observed under the constant drain-source current (I ds(DET) ) of the detector.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c7888e798e200e001fbfb51ebe6575ff https://doi.org/10.1109/irmmw-thz50926.2021.9567540 Zobrazit plný text záznamu