The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal‐oxide‐semiconductor devices
| Autor: | Jayarama Shenoy, Michael R. Melloch, Scott T. Sheppard, J.A. Cooper, W. Xie |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Fabrication Physics and Astronomy (miscellaneous) Silicon business.industry Polysilicon depletion effect Oxide chemistry.chemical_element engineering.material chemistry.chemical_compound Polycrystalline silicon chemistry Thermal engineering Optoelectronics business Metal gate Deposition (law) |
| Zdroj: | Applied Physics Letters. 68:2231-2233 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.115868 |
| Popis: | Thermal processing of polycrystalline silicon (polysilicon)/SiO2/SiC metal‐oxide‐semiconductor (MOS) devices following polysilicon deposition can have an adverse effect on the electrical properties of the SiO2/SiC interface. The primary effect is a negative shift in flatband voltage caused by an increase in fixed oxide charge and interface state density. These effects can be minimized or eliminated by restricting processing temperatures to 900 °C or below following polysilicon gate deposition. |
| Databáze: | OpenAIRE |
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