Ultrathin Silicon Nitride Films Fabricated by Single‐Wafer Processing Using an SiH2Cl2 ‐ NH 3 ‐ H 2 System and In Situ H 2 Cleaning
| Autor: | Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama, Hajime Watanabe, Tamotsu Ogata, Yutaka Inaba, Toshiharu Katayama |
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| Rok vydání: | 1996 |
| Předmět: |
Dynamic random-access memory
Materials science Renewable Energy Sustainability and the Environment business.industry Oxide Nanotechnology Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor Silicon nitride chemistry law Materials Chemistry Electrochemistry Optoelectronics Wafer Thin film business Dram |
| Zdroj: | Journal of The Electrochemical Society. 143:1459-1464 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | We demonstrated the formation technique of highly reliable ultrathin oxidized silicon nitride film (34 A in oxide equivalent thickness) on three-dimensional cylindrical stacked capacitor cells. In situ H 2 cleaning and low-pressure chemical vapor deposition of silicon nitride using SiH 2 Cl 2 and NH 3 gases were successively carried out in a reactor, which can accommodate an 8 in. silicon wafer. The conduction current through the film was suppressed and the time-to-breakdown was substantially improved by the complete elimination of the bottom oxide. The intrinsic lifetime of the cylindrical stacked capacitors, which was comparable to that of the conventional stacked capacitors, was estimated to be long enough for use in 256 Mbit dynamic random access memory (DRAM). This result has revealed that the present single-wafer process is very effective and practical for the three-dimensional capacitor formation of the next generation DRAMs. |
| Databáze: | OpenAIRE |
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