Monte Carlo simulation of electron transport in GaAs/Ga1-xAlxAs quantum wells using different phonon models

Autor: R.W. Kelsall, D. Hoare, R. A. Abram, M P Chamberlain
Rok vydání: 1992
Předmět:
Zdroj: Semiconductor Science and Technology. 7:B45-B48
ISSN: 1361-6641
0268-1242
DOI: 10.1088/0268-1242/7/3b/012
Popis: The authors calculate electron-LO phonon intersubband scattering rates and intrasubband scattering rates in a 70 AA GaAs/Ga0.7Al0.3As quantum well considering the phonons to be described by the hydrodynamic model, the slab mode model and the bulk phonon approximation. These rates for the different phonon models are used in a Monte Carlo simulation of the electron drift velocity in the quantum well under the influence of an electric field.
Databáze: OpenAIRE