Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
| Autor: | Jenn-Fang Chen, Chuli Chao, Ching Hsueh Chiu, Hsi-Hsuan Yen, Shun-Jen Cheng, Ching-Hua Chiu, Bo-Chun Chen, Yih-Der Guo, Yen-Hsiang Fang, Hao-Chung Kuo, Zhen-Yu Li, Rong Xuan, Chien-Chung Lin |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Gallium nitride Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Optoelectronics Light emission Nanorod Quantum efficiency Electrical and Electronic Engineering business Light-emitting diode Diode |
| Zdroj: | IEEE Photonics Technology Letters. 23:798-800 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2011.2134081 |
| Popis: | Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to ~ 107 cm-2. In this letter, we report InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on this FS-GaN substrate. The defect densities in the homoepitaxially grown LEDs were substantially reduced, leading to improved light emission efficiency. Compared with the LED grown on sapphire, we obtained a lower forward voltage, smaller diode ideality factor, and higher light-output power in the same structure grown on FS-GaN. The external quantum efficiency (EQE) of LEDs grown on FS-GaN were improved especially at high injection current, which brought the efficiency droop phenomenon greatly reduced at high current density. |
| Databáze: | OpenAIRE |
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