Films of 60/40 PZT by the mod process for memory applications

Autor:	R. W. Vest, W. Zhu
Rok vydání:	1991
Předmět:	chemistry.chemical_classification Materials science business.industry Annealing (metallurgy) Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Mod X-ray crystallography Ferroelectric hysteresis Optoelectronics Wafer Thin film business Inorganic compound
Zdroj:	Ferroelectrics. 119:61-75
ISSN:	1563-5112 0015-0193
Popis:	Films of PbZr0.6Ti0.4O3 (60/40 PZT) that were nearly pin hole free with uniform composition and thickness were prepared by the metallo-organic decomposition (MOD) process on Pt coated Si wafers. The polarization reversal characteristics important for memory applications were studied as a function of film thickness and annealing conditions. The processing conditions were not optimized, but the switching characteristics achieved with ± 5 volt pulses both initially and after 1010 reversals were promising.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c7770e4d951828c1ce93aa3914692b1c https://doi.org/10.1080/00150199108223327 Zobrazit plný text záznamu