Characteristics of Silicon Wafer‐Bond Strengthening by Annealing
| Autor: | Shigeru Aoki, Masatada Horiuchi |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Renewable Energy
Sustainability and the Environment Wafer bonding Chemistry Annealing (metallurgy) Bond Sintering Mineralogy Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Materials Chemistry Electrochemistry Wafer Composite material Scanning tunneling microscope Electron microscopic |
| Zdroj: | Journal of The Electrochemical Society. 139:2589-2594 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2221269 |
| Popis: | The role of bond strengthening by annealing after wafer bonding was studied. The bonded interfaces of various wafer bonding systems were microscopically examined using a scanning tunneling microscope and by making cross-sectional transmission electron microscopic analyses. These observations provided the basis for an understanding of a wafer-bond strengthening model using a sintering mechanism analogously applied, in metal-surface physics. The model is a mass-transfer model at the interface |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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