SIMS quantification of thick Si1−xGexfilms (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+beam
| Autor: | Y. Le Gall, C. Dubois, G. Prudon, J.C. Dupuy, J. P. Graf, Dominique Muller, Brice Gautier |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Range (particle radiation)
Materials science Silicon Alloy Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces General Chemistry engineering.material Condensed Matter Physics Mass spectrometry Surfaces Coatings and Films Ion chemistry Yield (chemistry) Materials Chemistry engineering Beam (structure) |
| Zdroj: | Surface and Interface Analysis. 45:376-380 |
| ISSN: | 0142-2421 |
| Popis: | The isotopic comparative method (ICM) has been used to measure the concentrations and relative ion yields of Si+, Ge+ (Si-, Ge-) in SiGe alloys ranging almost from pure silicon to pure germanium by secondary-ion mass spectrometry under Ar+ bombardment at 8 keV, ~39° incidence, (17 keV, ~25°). This method requires only two specific ICM reference samples to be fabricated. The negative-secondary-ion yields YR−(Si) and YR−(Ge) are found to be nearly constant over the entire range of SiGe alloy. The measurement conditions are free of matrix effects, thereby allowing accurate and easy quantification of SiGe alloys. In contrast, the positive-secondary-ion yield YR+ (Si) decreases strongly over the full range of SiGe alloy, whereas YR+(Ge) varies only slightly for cGe |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text