Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
| Autor: | Paul T. Blanchard, Jaclyn K. Sprenger, Andrew S. Cavanagh, Huaxing Sun, Steven M. George, Alexana Roshko |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Hydrogen Dangling bond Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition chemistry.chemical_compound General Energy chemistry Ellipsometry Boron nitride Borazine Physical and Theoretical Chemistry Thin film 0210 nano-technology Deposition (law) |
| Zdroj: | The Journal of Physical Chemistry C. 122:9455-9464 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B3N3H6) and electrons. Electron-stimulated desorption (ESD) of hydrogen surface species and the corresponding creation of reactive dangling bonds are believed to facilitate borazine adsorption and reduce the temperature required for BN film deposition. In situ ellipsometry measurements showed that the BN film thickness increased linearly versus the number of EE-ALD cycles at room temperature. Maximum growth rates of ∼3.2 A/cycle were measured at electron energies of 80–160 eV. BN film growth was self-limiting versus borazine and electron exposures, as expected for an ALD process. The calculated average hydrogen ESD cross section was σ = 4.2 × 10–17 cm2. Ex situ spectroscopic ellipsometry measurements across the ∼1 cm2 area of the BN film defined by the electron beam displayed good uniformity in thickness. Ex situ X-ray photoelectron spe... |
| Databáze: | OpenAIRE |
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