Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs
| Autor: | C.-C. Chu, Arto V. Nurmikko, G. C. Hua, T. B. Ng, D. C. Grillo, J. Han, Robert L. Gunshor |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Solid-state physics business.industry Band gap Inorganic chemistry Nucleation Stacking Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Transmission electron microscopy Materials Chemistry Macle Optoelectronics Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 25:263-267 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02666255 |
| Popis: | ZnMgSSe and ZnSSe layers grown on GaAs substrates with GaAs buffer layers by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). The depth level at which paired triangular stacking faults are nucleated in the ZnMgSSe/GaAs heterostructure has been investigated by using the plan-view TEM technique. It has been found that in the ZnMgSSe/GaAs heterostructure the nucleation of the paired stacking faults occurs within a range of depth which starts at the II-VI/GaAs interface and ends at a level that is above the interface by about 120 nm. The dominant type of defects in ZnSSe layers, which have the single triangular shape, has been identified to be microtwins by high resolution TEM. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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