Comparing 193 nm photoresist roughening in an inductively coupled plasma system and vacuum beam system
| Autor: | D. Nest, M. J. Titus, Ting-Ying Chung, David B. Graves |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Argon
Acoustics and Ultrasonics Physics::Instrumentation and Detectors Ultra-high vacuum Analytical chemistry chemistry.chemical_element Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion chemistry Physics::Plasma Physics Etching (microfabrication) Surface roughness Physics::Accelerator Physics Irradiation Atomic physics Inductively coupled plasma |
| Zdroj: | Journal of Physics D: Applied Physics. 42:245205 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/42/24/245205 |
| Popis: | We present a comparison of blanket 193nm photoresist (PR) roughening and chemical modifications of samples processed in a well-characterized argon (Ar) inductively coupled plasma (ICP) system and an ultra-high vacuum beam system. In the ICP system, PR samples are irradiated with Ar vacuum ultraviolet (VUV) and Ar ions, while in the vacuum beam system, samples are irradiated with either a Xe-line VUV source or Ar-lamp VUV source with Ar ions. Sample temperature, photon flux, ion flux and ion energy are controlled and measured. The resulting chemical modifications to bulk 193nm PR and surface roughness are analysed with Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy. We demonstrate that under VUV-only conditions in the vacuum beam and ICP (with no substrate bias applied) systems 193nm PR does not roughen. However, roughness increases with simultaneous high energy (>70eV) ion bombardment and VUV irradiation and is a function of VUV fluence, substrate temperature and photon-to-ion flux ratio. PR processed in the ICP system experiences increased etching, probably due to release of H- and O-containing gaseous products and subsequent chemical etching, in contrast to samples in the vacuum beam system where etch-products are rapidly pumped away. The surface roughness structure and behaviour, however, remain similar and this is attributed to the synergy between VUV-photon and positive ions. (Some figures in this article are in colour only in the electronic version) |
| Databáze: | OpenAIRE |
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