| Autor: |
Maya P. Mikhailova, Konstantin D. Moiseev, Anthony Krier, Yury P. Yakovlev |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential barriers produce effective electron-hole confinement at the interface and results in a tunnel-injection radiative recombination mechanism within the device due to reduce leakage current from the active region. The creation of high barriers for carriers leads to their strong accumulation in the active region and increases quantum emission efficiency of the spatially separated electrons and holes across the heteroboundary. Our approach also leads to the suppression of non-radiative Auger-recombination and a corresponding increase in the operation temperature of the laser. The active region of the laser structure consists of the type II heterojunction formed by narrow-gap In0.83Ga0.17As0.82Sb0.18 (Eg = 0.393 eV at 77 K) and wide-gap Ga0.84In0.16As0.22Sb0.78 (Eg = 0.635 eV at 77 K) layers lattice-matched to InAs substrate.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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