Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing

Autor:	Akimasa Kinoshita, Makoto Katou, Miwa Kawasaki, Kazutoshi Kojima, Kenji Fukuda, Kazuo Arai, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima
Rok vydání:	2006
DOI:	10.4028/0-87849-425-1.835
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c738691fa27d7a5e567c93f36511edf6 https://doi.org/10.4028/0-87849-425-1.835 Zobrazit plný text záznamu