Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD

Autor:	T. A. Bagaev, A. Yu. Andreev, A A Padalitsa, Maxim A. Ladugin, A N Zubov, A. V. Lobintsov, P. V. Gorlachuk, S. M. Sapozhnikov, A. A. Marmalyuk, I I Zasavitskii
Rok vydání:	2016
Předmět:	010302 applied physics Materials science business.industry Statistical and Nonlinear Physics Heterojunction 02 engineering and technology Laser 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Wavelength Surface coating 020210 optoelectronics & photonics Optics law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Electric current business Quantum cascade laser Current density
Zdroj:	Quantum Electronics. 46:447-450
ISSN:	1468-4799 1063-7818
DOI:	10.1070/qel16058
Popis:	A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al0.45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm-2. The maximum output power of the laser with dimensions of 30 μm × 3 mm and with cleaved mirrors exceeded 200 mW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c727d46b5520fd96a497fb81dba4f1a3 https://doi.org/10.1070/qel16058 Zobrazit plný text záznamu