| Autor: |
Sang H. Choi, Glen C. King, Yeon-Joon Park |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 310:2724-2731 |
| ISSN: |
0022-0248 |
| Popis: |
Highly [1 1 1]-oriented rhombohedral hetero-structure epitaxy of cubic SiGe semiconductor on trigonal c-plane sapphire was achieved and characterized with two new advanced X-ray diffraction methods to control the formation of primary-twin crystals. The formation of twin crystals on (1 1 1) plane was controlled with growth parameters such that the volume percentage of primary-twin crystal was reduced from 40% to 0.3% compared to the majority single crystal. The control of stacking faults can yield single-crystalline semiconductors without defects or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. In this study, about 94% of all epitaxial layers were fabricated in a single-crystalline phase. We propose the temperature-dependent alignment model of energetically favored majority single-crystalline SiGe layer on c-plane sapphire. This study shows that nearly single-crystalline cubic semiconductors can be grown in the [1 1 1] orientation on the basal (0 0 0 1) planes of selected trigonal crystal substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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