Impurity levels in Hg3In2Te6 crystals
| Autor: | S. V. Bilichuk, S. M. Chupyra, O. G. Grushka |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Band gap Electron concentration Analytical chemistry 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Differential analysis Electronic Optical and Magnetic Materials Hall effect Impurity Seebeck coefficient 0103 physical sciences Condensed Matter::Strongly Correlated Electrons 0210 nano-technology |
| Zdroj: | Semiconductors. 51:1041-1043 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617080061 |
| Popis: | The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy E F(T). The dependences n(T) and E F(T) are obtained from data on the Hall coefficient R(T) and the thermopower α(T). Differential analysis of the dependences n(T) shows that, under variations in the degree of compensation by heat treatment of the samples, a wider spectrum of impurity levels in the band gap of Hg3In2Te6 can be analyzed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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