Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant
| Autor: | Miao-Rong Zhang, Hong-Dan Peng, Ge-Bo Pan, Shuang-Jiao Qin |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Analytical chemistry 02 engineering and technology 010402 general chemistry 01 natural sciences chemistry.chemical_compound symbols.namesake Etching (microfabrication) General Materials Science Porosity Photocurrent business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Semiconductor PECE chemistry Mechanics of Materials Ionic liquid symbols Optoelectronics 0210 nano-technology business Porous medium Raman spectroscopy |
| Zdroj: | Materials Letters. 182:363-366 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2016.07.024 |
| Popis: | Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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