Simulation Study of Lateral Schottky Barrier IMPATT Diode Based on AlGaN/GaN 2-DEG for Terahertz Applications

Autor:	Xiao-Yu Zhang, Lin-An Yang, Xiao-Lin Hu, Wen-Lu Yang, Yu-Chen Liu, Yang Li, Xiao-Hua Ma, Yue Hao
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:1006-1013
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3147746
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c70de5e1d9db5e5b7c7bfcd60a1b385b https://doi.org/10.1109/ted.2022.3147746 Zobrazit plný text záznamu