Monolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits
| Autor: | Lu Chun-Chieh, Chao-Ching Cheng, Lain-Jong Li, Chiang Hung-Li, Chen Tzu-Chiang, Tianqi Gao, H.-S. Philip Wong, Ang-Sheng Chou, Zheng Cui, Tsu-Ang Chao, Jianwen Zhao |
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| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science Power gating business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Ring oscillator Carbon nanotube 021001 nanoscience & nanotechnology 020202 computer hardware & architecture law.invention CMOS law Logic gate Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm19573.2019.8993593 |
| Popis: | High performance carbon nanotube (CNT) network transistors with on-resistance (R on ) of DDQ ) and have the comparable active power (P ACTIVE ) consumption under the same operation frequency as compared to the operation without the power gating CNT transistors. The fabrication of CNT devices in the BEOL is verified to cause no performance degradation in the underlying FEOL Si CMOS devices. This study has successfully demonstrated heterogeneous integration of advanced Si logic circuits with low-cost and high-mobility CNT transistors in the BEOL fabricated at low, BEOL-compatible temperatures (250 °C). |
| Databáze: | OpenAIRE |
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