A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiC

Autor: Sir Cong Chong, Claude Ahyi, Kim Nie Chong, Meng Suan Liang, Rusli, Kerlit Chew, Chin-Che Tin, Kim Luong Lew
Rok vydání: 2011
Předmět:
Zdroj: MRS Proceedings. 1305
ISSN: 1946-4274
0272-9172
DOI: 10.1557/opl.2011.306
Popis: Interface state density profiling of the thermal oxide / n-type 4H-SiC interface which underwent post-oxidation nitric-oxide (NO) annealing showed that an interface state density of approximately 1×1011 cm−2eV−1 could be achieved at around 0.2 eV below the conduction band. It decreased exponentially by two orders to 1×109 cm-2eV-1 at around 0.9 eV from the conduction band. The values are comparable or better than other published work. The low interface state density achieved near the conduction band is important towards improved channel carrier mobility in SiC MOSFETs. A positive flat-band voltage shift of the SiC based MOS capacitor was also observed. The shift reduced under UV illumination. It could be attributed to slow acceptor-like (negatively-charged) traps, which may have contributed to the instabilities observed in drain current and threshold voltage suffered by SiC MOSFETs.
Databáze: OpenAIRE
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