Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)

Autor:	S. Z. Rahaman, Y.-J. Chang, Y.-C. Hsin, S.-Y. Yang, F.-M. Chen, K.-M. Chen, I-J. Wang, H.-H. Lee, G.-L. Chen, Y.-H. Su, C.-Y. Shih, S.-C. Chiu, J.-H. Wei, S.-C. Yen, K.-C. Huang, C.-C. Chen, M.-C. Chen, S.-S. Sheu, W.-C. Lo, S.-Z. Chang, Y.-C. See, D.-L. Deng, C.-I Wu
Rok vydání:	2022
Zdroj:	2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
DOI:	10.1109/vlsi-tsa54299.2022.9771005
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c6e93f94d7ad148da6dbadc40e409b95 https://doi.org/10.1109/vlsi-tsa54299.2022.9771005 Zobrazit plný text záznamu