Direct Measurement of Surface Charging during Plasma Etching

Autor:	Shigemi Murakawa, James P. McVittie
Rok vydání:	1994
Předmět:	Plasma etching business.industry Chemistry Scanning electron microscope General Engineering General Physics and Astronomy Plasma Optics Etching (microfabrication) Distortion Optoelectronics Wafer Surface charge Reactive-ion etching business
Zdroj:	Japanese Journal of Applied Physics. 33:4446
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.33.4446
Popis:	An on-wafer surface potential probe was developed for the direct real-time measurement of the local charging on a wafer surface during plasma etching. Pressure and rf power dependencies of the surface charging potential were measured in a nonuniform magnetron plasma by this probe. The variation in etching profiles was also observed by scanning electron microscopy (SEM). The measured surface charging potential was consistent with previously expected values from the profile distortion and device damage results. The local surface charging and the profile distortion increased as the pressure was reduced, while they were insensitive to the rf power change.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c6e407276121150d973dc018f153ecbd https://doi.org/10.1143/jjap.33.4446 Zobrazit plný text záznamu