Strain Engineering in Si Split-Gate Trench Power MOSFETs by Partial Oxidation of Polysilicon Electrodes

Autor:	Stefan Karner, Maximilian Rösch, Germano Galasso, Seung Hwan Lee, Oliver Blank
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 70:1168-1175
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3230917
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c6df643cc485346c0d17e8d7937cbe56 https://doi.org/10.1109/ted.2022.3230917 Zobrazit plný text záznamu