Self-organized pattern formation of biomolecules at silicon surfaces: Intended application of a dislocation network
| Autor: | Michael Seibt, Winfried Seifert, A. Wolff, Mario Birkholz, Martin Kittler, W. Fritzsche, O. F. Vyvenko, Tzanimir Arguirov, Manfred Reiche, T. Wilhelm, Xuegong Yu |
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| Rok vydání: | 2006 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Field (physics) Silicon Misorientation chemistry.chemical_element Bioengineering 02 engineering and technology Direct bonding 021001 nanoscience & nanotechnology 01 natural sciences Biomaterials Crystallography Depletion region chemistry Mechanics of Materials Electric field 0103 physical sciences Wafer Dislocation 0210 nano-technology |
| Zdroj: | Materials Science and Engineering: C. 26:902-910 |
| ISSN: | 0928-4931 |
| DOI: | 10.1016/j.msec.2005.09.047 |
| Popis: | Defined placement of biomolecules at Si surfaces is a precondition for a successful combination of Si electronics with biological applications. We aim to realize this by Coulomb interaction of biomolecules with dislocations in Si. The dislocations form charged lines and they will be surrounded with a space charge region being connected with an electric field. The electric stray field in a solution of biomolecules, caused by dislocations located close to the Si surface, was estimated to yield values up to few kVcm � 1 . A regular dislocation network can be formed by wafer direct bonding at the interface between the bonded wafers in case of misorientation. The adjustment of misorientation allows the variation of the distance between dislocations in a range from 10 nm to a few Am. This is appropriate for nanobiotechnology dealing with protein or DNA molecules with sizes in the nm and lower Am range. Actually, we achieved a distance between the dislocations of 10–20 nm. Also the existence of a distinct electric field formed by the dislocation network was demonstrated by the technique of the electron-beam-induced current (EBIC). Because of the relatively short range of the field, the dislocations have to be placed close to the surface. We positioned the dislocation network in an interface being 200 nm parallel to the Si surface by layer transfer techniques using hydrogen implantation and bonding. Based on EBIC and luminescence data we postulate a barrier of the dislocations at the as bonded interface |
| Databáze: | OpenAIRE |
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