Isoelectronic Tungsten Doping in Monolayer MoSe2for Carrier Type Modulation
| Autor: | An-Ping Li, Lo-Yueh Chang, Christopher M. Rouleau, Xufan Li, Alexander A. Puretzky, Chia-Hao Chen, Jaekwang Lee, David B. Geohegan, Kai Wang, Kai Xiao, Saban M. Hus, Juan C. Idrobo, Ming-Wei Lin, Leonardo Basile, Yen Chien Kuo |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Condensed matter physics Mechanical Engineering Doping Fermi level chemistry.chemical_element 02 engineering and technology Tungsten 010402 general chemistry 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences 0104 chemical sciences symbols.namesake Transition metal chemistry Mechanics of Materials Lattice (order) Monolayer symbols General Materials Science Carrier type 0210 nano-technology |
| Zdroj: | Advanced Materials. 28:8240-8247 |
| ISSN: | 0935-9648 |
| Popis: | Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe2 is converted to nondegenerate p-type monolayer Mo1-x Wx Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo1-x Wx Se2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice. |
| Databáze: | OpenAIRE |
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