Improved graphene growth in UHV: Pit-free surfaces by selective Si etching of SiC(0001)–Si with atomic hydrogen
| Autor: | J. E. Rowe, Andreas Sandin, Daniel B. Dougherty |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Auger electron spectroscopy
Materials science Yield (engineering) Hydrogen Silicon Graphene chemistry.chemical_element Nanotechnology Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry Chemical engineering law Etching (microfabrication) Materials Chemistry Scanning tunneling microscope Layer (electronics) |
| Zdroj: | Surface Science. 611:25-31 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2013.01.010 |
| Popis: | We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation process at temperatures around 1000 °C according to Auger Electron Spectroscopy. This allows for separate, non-thermal control of the rate of formation of the interfacial buffer layer formation to yield reduced pit formation observed by scanning tunneling microscopy during subsequent UHV graphene growth. |
| Databáze: | OpenAIRE |
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