Electrical characterization of silicon-on-insulator structures with a nondamaging elastic–metal gate
| Autor: | Robert J. Hillard, William H. Howland, Win Ye, Louison C. Tan |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon business.industry Gate dielectric Transistor General Engineering chemistry.chemical_element Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY law.invention Characterization (materials science) chemistry Hardware_GENERAL law Gate oxide MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics business Metal gate Hardware_LOGICDESIGN |
| Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:450 |
| ISSN: | 0734-211X |
| DOI: | 10.1116/1.1621888 |
| Popis: | This article explores electrical characterization methods for silicon-on-insulator (SOI) structures with a nondamaging elastic metal gate (EM gate). Important material electrical properties related to the top silicon layer, gate dielectric and interfaces, and buried oxide are addressed. The techniques utilized are currently under development for SOI and are based on EM-gate capacitance–voltage methods, current–voltage methods, and a back channel metal–oxide–semiconductor transistor that utilizes elastic probes to form a temporary source and drain. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|