Progress in ion projection lithography
| Autor: | J. Fegerl, Gerhard Stengl, G. Lammer, C. Traher, R. Nowak, A. Chalupka, P. Wolf, R. Fischer, L. Malek, Hans Loschner |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Duoplasmatron Condensed Matter Physics Stencil Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Resist Optoelectronics X-ray lithography Stencil lithography Electrical and Electronic Engineering business Lithography Next-generation lithography |
| Zdroj: | Microelectronic Engineering. 17:229-240 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(92)90047-u |
| Popis: | Ion protection lithography (IPL) uses demagnifying ion optics to project open stencil mask structures onto a substrate with reduced (.. 5x, 10x, ..) scale [1]. The IPL technique offers high throughput potential by using duoplasmatron ion sources with high angular current densities [2] and with virtual source sizes of less than 10 pm. Thus, for organic resists, chip exposure times of ≤ 0.1 sec are easily obtained. |
| Databáze: | OpenAIRE |
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