Asymmetric response of electrical conductivity and V valence state to strain in cation-deficient Sr1–y VO3 ultrathin films based on absorption measurements at the V L 2- and L 3-edges
Autor: | Jin-Cheng Zheng, Hui Zeng, Gertjan Koster, Hui-Qiong Wang, Meng Wu, Yu Yang Huang, Si Zhao Huang |
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Rok vydání: | 2019 |
Předmět: |
Nuclear and High Energy Physics
Radiation Materials science Valence (chemistry) Condensed matter physics Oxide Model system 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Metal chemistry.chemical_compound chemistry Electrical resistivity and conductivity visual_art 0103 physical sciences Ultimate tensile strength visual_art.visual_art_medium Thin film 010306 general physics 0210 nano-technology Instrumentation |
Zdroj: | Journal of Synchrotron Radiation. 26:1687-1693 |
ISSN: | 1600-5775 |
Popis: | The correlation between electronic properties and epitaxial strain in a cation-deficient system has rarely been investigated. Cation-deficient SrVO3 films are taken as a model system to investigate the strain-dependent electrical and electronic properties. Using element- and charge-sensitive soft X-ray absorption, V L-edge absorption measurements have been performed for Sr1–y VO3 films of different thicknesses capped with 4 u.c. (unit cell) SrTiO3 layers, showing the coexistence of V4+ and V5+ in thick films. A different correlation between V valence state and epitaxial strain is observed for Sr1–y VO3 ultrathin films, i.e. a variation in V valence state is only observed for tensile-strained films. Sr1–y VO3 thin films are metallic and exhibit a thickness-driven metal–insulator transition at different critical thicknesses for tensile and compressive strains. The asymmetric response of electrical conductivity to strain observed in cation-deficient Sr1–y VO3 films will be beneficial for functional oxide electronic devices. |
Databáze: | OpenAIRE |
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