XPS study of metal/SiOx/Si interfaces
| Autor: | J.F. Zheng, W. Pong, Z.X. He |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Radiation Materials science Base (chemistry) business.industry Binding energy Analytical chemistry chemistry.chemical_element Schottky diode Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal Xenon Semiconductor chemistry X-ray photoelectron spectroscopy visual_art visual_art.visual_art_medium Thin metal Physical and Theoretical Chemistry business Spectroscopy |
| Zdroj: | Journal of Electron Spectroscopy and Related Phenomena. 52:121-126 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/0368-2048(90)85010-7 |
| Popis: | Measurements of x-ray photoemission from thin metal films on n-type and p-type Si/SiOx substrates were made in the presence of light bias. The effect of the illumination from a xenon source is the generation of an open-circuit photovoltage between the metal film and the Si base. This photovoltage produces an apparent shift in the binding energy of the photoelectron from the metal. For the n-type Si/SiOx/Pd structure , the measured binding energy of the Pd 3d 5 2 photoelectron is found to be larger by 0.15 ± 0.03 eV, whereas the corresponding energy for p-type Si/SiOx/Cr/Pd is smaller by 0.23 ± 0.03 eV. The direction of the energy shift is in agreement with the Schottky photovoltaic theory. The technique can be used to study the relation between the open-circuit photovoltage and the metal microislands deposited on the semiconductor surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|