| Autor: |
V. M. Lisitsyn, V. M. Reiterov, V. I. Korepanov, Y V Bikhert, A. T. Akylbekov, Alma Dauletbekova, L. A. Lisitsyna |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
IOP Conference Series: Materials Science and Engineering. 38:012039 |
| ISSN: |
1757-899X |
| DOI: |
10.1088/1757-899x/38/1/012039 |
| Popis: |
This paper presents the results of examining the stability of induced radiation defects in crystals at 15K. The following regularities have been established. Defects induced at low temperatures in pure and Nd 3+ doped LiYF4 crystals are unstable: upon termination of radiation, even at 15K induced color centers are visibly destructed, exposure to the halogen lamp light increases the destruction speed significantly. Heating crystals up to 80K results in complete destruction of color centers induced at 15К. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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