Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
| Autor: | Shih-Wen Shen, Chun-Jung Su, Ming-Hsien Lee, Horng-Chih Lin |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Nanowire Electrical engineering Short-channel effect Drain-induced barrier lowering Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials law.invention law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 53:2471-2477 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2006.882033 |
| Popis: | The performance of thin-film transistors with a novel poly-Si nanowire channel prepared by solid-phase crystallization is investigated in this paper. As compared with conventional planar devices having self-aligned source/drain, the new devices show an improved on-current per unit width and better control over the short channel effects. The major conduction mechanism of the off-state leakage is identified as the gate-induced drain leakage, and it is closely related to the source/drain implant condition and the unique device structure |
| Databáze: | OpenAIRE |
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