Transmission electron microscopy study of extended defect evolution and amorphization in SiC under Si ion irradiation
| Autor: | Jean‐Marc Costantini, Joël Ribis |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion chemistry.chemical_compound chemistry Transmission electron microscopy 0103 physical sciences Materials Chemistry Ceramics and Composites Silicon carbide Optoelectronics Irradiation 0210 nano-technology High-resolution transmission electron microscopy business |
| Zdroj: | Journal of the American Ceramic Society. 104:1863-1873 |
| ISSN: | 1551-2916 0002-7820 |
| DOI: | 10.1111/jace.17595 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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