A 1.2-V 450-μW $G_{m}$ - $C$ Bluetooth Channel Filter Using a Novel Gain-Boosted Tunable Transconductor

Autor:	Fernando Muñoz, Manuel Sanchez-Raya, T. Sanchez-Rodriguez, Juan Antonio Gómez-Galán, Ramon G. Carvajal, Jaime Ramirez-Angulo
Rok vydání:	2015
Předmět:	Voltage-controlled filter Engineering business.industry Low-pass filter Electrical engineering Butterworth filter Chebyshev filter Hardware and Architecture Filter (video) Electrical and Electronic Engineering business High-pass filter Active filter Software All-pass filter
Zdroj:	IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23:1572-1576
ISSN:	1557-9999 1063-8210
Popis:	A third-order Gm-C Chebyshev low-pass filter based on a novel gain-boosted tunable transconductor is presented. The transconductor employs local negative feedback for linearization controlling the drain voltage of the input transistors biased in the triode region. The gain boosted feedback amplifier is based on quasi-floating gate MOS transistors and its adjustable biasing current allows tuning the cutoff frequency of the filter. The filter is intended to be used in the baseband section of a zero-IF bluetooth low energy receiver and it has been fabricated in a standard 0.13-μm CMOS technology with a nominal cutoff frequency of 500 kHz. The power consumption of the overall filter is 450 μW with a supply voltage of 1.2 V. The measurement results show a third-order intermodulation distortion of -46.4 dB for two input tones located at the passband of the filter. The filter occupies a silicon area of 0.08 mm2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c697cf0c040feb1eb7c224fa184768f1 https://doi.org/10.1109/tvlsi.2014.2341929 Zobrazit plný text záznamu