Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates
| Autor: | O. Kruger, G. Trankle, F. Schnieder, G. Schone, R. Lossy, A. Liero, T. Wernicke, Joachim Würfl |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Laser beam machining Transistor Electrical engineering Wide-bandgap semiconductor Integrated circuit High-electron-mobility transistor Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Surface micromachining chemistry law Silicon carbide Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 27:425-427 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2006.874212 |
| Popis: | Vertical interconnect accesses (VIAs) were fabricated between the source electrode on the front and the ground on the backside of high-power microwave AlGaN/GaN high-electron mobility transistors (HEMTs) on /spl sim/400-/spl mu/m-thick silicon carbide substrates. Through-wafer microholes with an aspect ratio of up to /spl sim/ 8 were drilled using pulsed UV-laser machining and subsequently metallized using electroplating. The successful implementation of the laser-assisted VIA technology into device processing was proven by dc and RF characterization. When biased at 26 V, a saturated output power of 41.6 W with an associated power-added efficiency of 55% at 2 GHz was achieved for a 20-mm AlGaN/GaN HEMT with through-wafer VIAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|